Crack tip dislocations revealed by electron tomography in silicon single crystal.
Masaki Tanaka a*, Kenji Higashida a, Kenji Kaneko a b
Satoshi Hata c, and Masatoshi Mitsuhara c
a Department of Materials Science and Engineering, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka 819-0395, Japan
b JST-CREST, 744 Motooka, Nishi-ku, Fukuoka 819-0395, Japan
c Department of Engineering Sciences for Electronics and Materials, Kyushu University, 6-1 Kasuga koen, Kasuga,
Fukuoka 816-8580, Japan
Received 10 June 2008; revised 25 June 2008; accepted 25 June 2008
Available online 6 July 2008
Crack tip dislocations in silicon single crystals have been observed
by a combination of annular dark-field scanning transmission electron microscopy
and computed tomography.
A series of images was acquired by maintaining the diffraction vector parallel to
that of crack propagation to achieve sharp images of the dislocations.
The observed dislocations were reconstructed by a filtered back-projection,
and exhibited three-dimensional configurations of overlaid dislocations around the crack tip.
2008 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
Electron tomography; Fracture; Dislocations; Transmission electron microscopy; Scanning transmission electron microscopy