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Crack tip dislocations revealed by electron tomography in silicon single crystal.


Masaki Tanaka a*, Kenji Higashida a, Kenji Kaneko a b

Satoshi Hata c, and Masatoshi Mitsuhara c

a Department of Materials Science and Engineering, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka 819-0395, Japan
b JST-CREST, 744 Motooka, Nishi-ku, Fukuoka 819-0395, Japan
c Department of Engineering Sciences for Electronics and Materials, Kyushu University, 6-1 Kasuga koen, Kasuga,
Fukuoka 816-8580, Japan

Received 10 June 2008; revised 25 June 2008; accepted 25 June 2008
Available online 6 July 2008







Crack tip dislocations in silicon single crystals have been observed
by a combination of annular dark-field scanning transmission electron microscopy
and computed tomography.

A series of images was acquired by maintaining the diffraction vector parallel to
that of crack propagation to achieve sharp images of the dislocations.

The observed dislocations were reconstructed by a filtered back-projection,
and exhibited three-dimensional configurations of overlaid dislocations around the crack tip.

2008 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.



Keywords:
Electron tomography; Fracture; Dislocations; Transmission electron microscopy; Scanning transmission electron microscopy